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Ferroelectric-gate Field Effect Transistor Memories: Device Physics And Applications

Byung-eun Park Edited by Hiroshi Ishiwara , Masanori Okuyama
Mar 24, 2021
$248.50
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Overview

Appropriate for
Language
English
No. of Pages
425
Topics in Applied Physics
Publisher: Springer Nature
Shipping dimensions: 9" H x 6" W x 1" L
ISBN: 9789811512148
Life stage: null

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